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MJD50
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s
SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO TIP50
APPLICATIONS s SWITCH MODE POWER SUPPLIES s AUDIO AMPLIFIERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.
3 1
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 500 400 5 1 2 0.6 1.2 15 -65 to 150 150 Uni t V V V A A A A W
o o
C C
July 1997
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MJD50
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I CEO I EBO V CEO(sus) V CE(sat ) V BE(on) hFE fT hf e Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition F requency Small Signal Current Gain Test Cond ition s V CE = 500 V V CE = 300 V V EB = 5 V I C = 30 mA IC = 1 A IC = 1 A I C = 0.3 A IC = 1 A I C = 0.2 A I C = 0.2 A IB = 0.2 A VCE = 10 V VCE = 10 V V CE = 10 V VCE = 10 V VCE = 10 V f=2MHz f=1kHz 30 10 10 25 400 1 1.5 150 MHz Min. Typ . Max. 0.1 0.1 1 Un it mA mA mA V V V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Derating Curves
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MJD50
DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Capacitance
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MJD50
Switching Time Inductive Load Switching Time Inductive Load
Switching Time Inductive Load
Switching Time Inductive Load
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MJD50
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A" B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
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MJD50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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